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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3590 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) *Fast Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 330 150 6 7 12 4 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak A IB B Base Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature A PT 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3590 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 IC= 1mA; RBE= 330 V V(BR)CEO Collector-Emitter Breakdown Voltage 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.8 V Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V A A Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product tf Fall Time w ww scs .i VEB= 5V; IC= 0 IC= 1A; VCE= 1V IC= 5A; VCE= 1V .cn mi e 15 10 40 100 100 50 IC= 0.5A; VCE= 10V IC= 5A, IB1= -IB2= 0.5A MHz s 0.3 isc Websitewww.iscsemi.cn 2 |
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